Category Archives: work

Ultra Low Noise Transistor Modeling

When modeling transistors for use in low noise amplifiers, special care must be taken to accurately simulate small signal noise performance. As the minimum achievable noise temperature drops, measurement uncertainty increases. This work documents the development of models for the OMMIC 4F200, a 70 nm GaAs pHEMT, and the Diramics 4F250, a 100 nm InP HEMT. A two step procedure was taken to completely extract the small signal and noise parameters with reasonable certainty using a modified Pospieszalski model.

Continue reading